ZNO NANOSTRUCTURES

ture of ZnO. SEM observations depict that the ZnO product grows in the form of nanorods united togetherto form 3D dandelion-like nanostructures. The elemental analysis using EDAX technique confirms thestoichiometry of the ZnO nanorods. The product exhibits special optical properties with red-s[r]

Photoelectric propertiesabstractOrdered sea urchin-like zinc oxide (ZnO) nanostructures were fabricated via a simple hydrothermalprocess at relatively mild conditions by one step. The microstructure, morphology and the photoelectricproperties of the as-prepared products were investigated by x[r]

References1. Gong Y, Andelman T, Neumark G, O’Brien S, Kuskovsky I: Origin of defect-related green emission from ZnO nanoparticles: effect of surfacemodification. Nanoscale Res Lett 2007, 2:297-302.2. Bian J, Liu W, Liang H, Hu L, Sun J, Luo Y, Du G: Room temperatureelectroluminescence from the n-Zn[r]

attributed to the growth rates of the specific planes in the ZnOnanostructure. It was found that the solution pH is the main factoraffecting the morphology of the ZnO nanostructure. XRD and SAEDshowed that the ZnO nanostructures were single-crystalline withgood crystallinity. The PL spectra sh[r]

Fabrication, Doping and Characterization of Polyaniline and Metal Oxides: Dye Sensitized Solar Cells 127 Shaw, P. E., Ruseckas, A., & Samuel, I. D. W., Exciton Diffusion Measurements in Poly(3-hexylthiophene), Adv. Mater., 20 (2008) 3516-3520. Sirringhaus, H., Brown, P. J., Friend, R. H., N[r]

nanoscale heterojunction atreverse and forward bias. Inset shows the prototype of the nanodevice.b I–V curve of ZnO/Zn3P2heterojunction under illumination ofdifferent wavelengths as displayed in logarithmic scale under reversebias786 Nanoscale Res Lett (2009) 4:779–788123of the light. The p–n hetero[r]

compositions have recently become of particular interestwith respect to potential applications in nanoscale buildingblocks of future optoelectronic devices and systems [1–3].Among them, core/shell(or sheath) nanostructure materialscan prevent oxidation of semiconductor 1D nanostructuresand thus fore[r]

Photoelectric propertiesa b s t r a c tDifferent morphologies of ZnO micro-nanostructures were

Chapter 1: Introductiondiode (LED) made of this kind of structure can be tuned by the width of thequantum well of GaAs.2) One-dimensional (1D) nanostructures: electrons are confined in twodimensions, free in one dimension. Recently, 1D nanostructures such as nanowires,nanorods and nano[r]

bAuAuAuAuAuCaCaFull Scale 368 cts Cursor: -0.102 keV (0 cts)12345678910keV0OSiFull Scale 368 cts Cursor: -0.102 keV (0 cts)12345678910keV65.69Spectrum 2Fig. 3. (a) is the corresponding EDX data of the head (marked as a with an arrow in Fig. 2) and (b) is the corresponding EDX data of the stem (marke[r]

observation at different growth temperatures. How-ever, the QD pairs tend to merge together with furtherannealing.For example, Fig. 5 shows an AFM image of theQD pair nanostructures after 600 s of annealing.Compared to Fig. 4a, the paired QDs have connectedtogether to form a rod sitting on a[r]

evaporator coils, shell-and-tube condenser, rarefied gas, flat miniature heat pipe, particles in binary gas-solid fluidization bed, solidification phenomena, profile evolution, heated solid wall, axisymmetric swirl, thermal approaches to laser damage, ultrafast heating characteristics, and temperatu[r]

NANO REVIEWQuantum dots coordinated with conjugated organic ligands: newnanomaterials with novel photophysicsNathan I. Hammer Æ Todd Emrick Æ Michael D. BarnesReceived: 27 April 2007 / Accepted: 8 May 2007 / Published online: 6 June 2007Ó to the authors 2007Abstract CdSe quantum dots functionalized[r]

2flux was gradually overweighed by Ti flux, result-ing in the increase of the length-width ratio. Thus, itcan be concluded that the sputtering rates of Ti targetand SnO2targe t have a great influence on th e morphol-ogy of nanostructures.To investigate the relationship of the sputtering ratew[r]

poor and defect-rich HOPG surfaces.discharge voltage of 600 V and a typical Ar ioncurrent of 0.2 A, a Si deposition rate of 0.3 nm/swas obtained. A quartz crystal micro-balance2. Experimentalmounted at a distance of 10 cm from the Si targetmonitored the flux during deposition. The cleavedHOPG substra[r]

semiconductor with many interesting properties, such ashigh hardness, large thermal conductivity, a low coefficientof thermal expansion, and excellent resistance to erosionand corrosion. Various SiC nanostructures have attractedmuch attention in recent years due to their potential appli-cation[r]

Page 6 of 8Since the provision of thermally generated electronsfrom TiO2increased when a templat e contained a largeamount of TiO2, Au ions were rapidly reduced anddeposited as shorter 1-D or 0-D GNSs. Similarly, UVirradiation during Au deposition in the TiO2-containingtemplate produced electrons ph[r]

Fig. 4. TEM and HRTEM images of Co-doped WO3nanorod arrays: (a) low TEM images of separated nanorod bundles, (b) high-magnification TEM images showing thebundle-like nanostructures, (c) and (d) HRTEM images showing the lattice structures of the nanorod bundles, (e) and (f) lattice resolved HRT[r]

One-dimensional nanostructures (1D: nanostructures withnanometer-sized diameters but much longer lengths), suchas nanorods/nanowires, nanotubes, and nanobelts havebeen extensively prepared and investigated, owing to theirunusual chemical and physical properties that differ fromthose of[r]

Nanoscale Res Lett (2010) 5:344–352 347123etched after removing the nanospheres, the etching isdouble side, but the leftover cones in Fig. 5c are about ahalf size of the ones in Fig. 5b. According to the results inFig. 4k and l, the cones in Fig. 5b and c are expected to bein similar size. The promi[r]