IN-DOPED ZNO

NANO EXPRESS Open AccessControllable synthesis of flake-like Al-doped ZnOnanostructures and its application in invertedorganic solar cellsXi Fan, Guojia Fang*, Shishang Guo, Nishuang Liu, Huimin Gao, Pingli Qin, Songzhan Li, Hao Long, Qiao Zhengand Xingzhong ZhaoAbstractFlake-like Al-<[r]

(ZnO).Experimental Procedure2,3-dibutoxy-1,4-poly(phenylenevinylene) (DBPPV) waspurchased from Eternal Chemical and used without furtherpurification. LEDs with an ITO/PEDOT:PSS/DBPPV–ZnO/Ca/Al structure were fabricated using the followingprocedures. Patterned ITO-Coated glass substrates werecleaned w[r]

NANO IDEASFirst-Principles Study of Magnetic Properties of 3d TransitionMetals Doped in ZnO NanowiresHongliang Shi Æ Yifeng DuanReceived: 1 October 2008 / Accepted: 22 January 2009 / Published online: 11 February 2009Ó to the authors 2009Abstract The defect formation energies of transi[r]

(MEST) and Korea Industrial Technology Foundation (KOTEF) through the Human Resource Training Project for Regional Innovation. References 1. Jeong J-A, Kim H-K: Thickness effect of RF sputtered TiO2 passivating layer on the performance of dye-sensitized solar cells. Solar Energy Mater Solar Cells[r]

[3] M.V. Vyazovskii, V.A. Yakovlev, Sov. Phys. Semicond. 11 (1977) 809. [4] E.M. Epshtein, Sov. Phys. Semicond. 10 (1976) 1164. [5] G.M. Shmelev, N.Q. Bau, V.H. Anh, Communiccation of the Joint Institute for Nuclear, Dubna, 600 (1981) 17. [6] L.V. Tung, T.C. Phong, P.T. Vinh, N.Q. Bau, J. Science (V[r]

(MEST) and Korea Industrial Technology Foundation (KOTEF) through the Human Resource Training Project for Regional Innovation. References 1. Jeong J-A, Kim H-K: Thickness effect of RF sputtered TiO2 passivating layer on the performance of dye-sensitized solar cells. Solar Energy Mater Solar Cells[r]

(PL) spectra in both samples while deep level transition is hardly observed. More emission peaks are found in the PLspectrum of the N-doped sample relative to that of a non-doped one. Raman scattering is also performed in backscattering configuration. E2mode is obse[r]

1. Szacilowski K, Macyk W, Drzewiecka-Matuszek A, Brindell M, Stochel G:Bioinorganic photochemistry: Frontiers and mechanisms. Chem Rev 2005,105:2647-2694.2. Warheit DB, Hoke RA, Finlay C, Donner EM, Reed KL, Sayes CM:Development of a base set of toxicity tests using ultrafine TiO2particlesas a comp[r]

models which purport to explain the mechanism of pair formation, and allow researchers to ignore irrelevant peculiarities of a particular system. In general, the preparation of novel phases of matter increases the likelihood of the discovery of novel material properties. The combinatorial app[r]

generation PV cells based on bulk Si – but all these problems are being addressed. The next step implies the further optimization of the fabrication parameters, developing of the efficient doping technique and defect passivation. 4. Silicon nanowire solar cells Nanowire solar cells demonstrated to d[r]

in a dielectric matrix are believed to be a promisingmaterial for applications in optoelectronics [1-3] andphotovoltaic solar cells [4-10]. One major advantage ofSi nanocrystals over bulk Si is the freedom to engineerthe material’s effective ba nd gap by varying the size ofthe Si NCs o[r]

refractive index of the PS layers. If the current density is modulated during the anodization, alternating layers of different porosities are formed as the silicon dissolution occurs primarily at the etched front PS/silicon substrates (Frohnhoff et al., 1995). Although the interface roughness betwee[r]

responding to Ag impurity (570 nm), relative to the othertwo bands 480 and 520 nm that originates due to nativedefects, enhanced and showed slight red shift withincreasing silver doping. In addition, decrease in the bandgap energy of the doped nanocrystals indicates that theintr[r]

Fig. 7 shows the high-resolution TEM images of 1% Ag/WO3which revealed high concentration of the defectiveregions (enriched with CS structure at [0 1 0] with respect to[0 0 1] WO3). It is found that the separation of thesedefective lines is not always identical re¯ecting their lackof a long-range or[r]

230.[16] A. Cabot, J. Arbiol, J.R. Morante, U. Weimar, N. Barsan, W. Gopel, Anal-ysis of the noble metal catalytic additives introduced by impregnation ofas obtained SnO2sol–gel nanocrystals for gas sensors, Sens. Actuators B70 (2000) 87–100.[17] C.D. Wagner, J.A. Taylor, Contributions to screening[r]

C.X. Thang, V.-H. Pham / Materials Science and Engineering B 197 (2015) 18–24Fig. 2. XRD patterns of the Eu-doped Si-HA prepared by the coprecipitation methodwith different TEOS and Eu(NO3 )3 concentrations: (A) 0.7Eu:2Si-HA, (B) 0.7Eu:4SiHA, (C) 0.7Eu:6Si-HA, (D) 0.5Eu:4Si-HA, and (E) Eu:4Si[r]

550 1 9 1092.2 1.65580 5 9 1081.7 0.29362 Nanoscale Res Lett (2010) 5:360–363123parasitic two-dimensional layer is formed between theNWs and an additional p–n junction is created. Second, Beadatoms may segregate on the NW sidewalls formingdepletion regions inside the NWs. Moreover, the fill factorFF[r]

were found to have a cubic spinel structure. TEM was used to study morphological variations. The results indicate that the average particle sizes are between 29÷35 nm. B-H hysteresis measurement was carried out at room temperature under field of 5 kOe and this measurement with the increase of Co2+ c[r]