TRANSPARENT CONDUCTING ZNO: AL FILMS DEPOSITED ON POLIMER SUBSTRATES BY R.F. MAGNETRONG SPUTTERING

Received 05 August 2019
Revised 25 September 2019; Accepted 09 October 2019
Abstract: This paper presents results of preparation of Ag doped ZnO bulk sample by solid state
reaction and Ag doped ZnO thin films by sputtering method. The effects of doping concentratio[r]

the (111) direction. In the optical studies, the band gap value decreased from 2.72 to 2.60 eV as the substrate temperature was increased from 483 to 589 K. In the current–voltage studies, the departure of the ideality factor from unity was due to the existence of a laterally varying potential b[r]

Results and Discussion
Effect of Thiocarbamide on Morphology of ZnO Nanorods
Figure 1 illustrates the SEM images of ZnO nanorods deposited onto SnO 2 covered glass substrates by the spray pyrolysis process using zinc chloride (Fig. 1 a) and zinc chloride containing th[r]

The research tendency has focused on improving carrier mobility rather than carrier concentration to enhance performance and response speed of TCO thin films. In this work, Indium, and Hydrogen co-doped ZnO (HIZO) thin films were deposited by using DC magnetron sputtering technique in hydrogen-plasm[r]

Magnetic properties of Co-ferrite films with a thickness of 40 nm deposited on glass with a ZnO underlayer at different substrate temperatures [Coercivity _Hc, the remanence ratio Mr/Ms,[r]

Proton-conducting polymer electrolyte films were prepared by dissolving NH4I salt in polyethylene oxide/methylcellulose (PEO/MC) blend polymers using the solution cast technique. The semi-crystalline nature of the sample was identified from the X-ray diffraction (XRD) pattern. The surface morphology[r]

large flexibility to accommodate oxygen deficiencies through the formation of CS planes.Thus, various WO 3 y x phases with 0 ) x ) 0.3 can occur, giving differ- ent CS structures, as we have observed.When the shear vector of the CS planes has a component normal to the surface plane, which is the cas[r]

Се-doped (Pb,Gd)3(Al,Ga)5O12 single crystalline garnet films were grown using liquid-phase epitaxy from four series of supercooled PbOeB2O3-based melt solutions on Gd3Ga5O12 and Gd3Al2.26Ga2.74O12 single crystal substrates. This study reports the optical and scintillation properties of (Pb,Gd)3(Al,G[r]

similar to the average diameter of aniline-capped AuNPs, which were observed with the TEM, used in this experiment.
Figure 2b shows FT-IR spectra of the N 2 plasma-treated polymer films that were synthesized by varying the RF power (20 to approximately 50 W)[r]

The photoluminescence spectra at 11-300 K show emission bands related to neutral donor-bound exciton, donor-acceptor pairs and transitions from shallow donors to valence band1.[r]

We note that for Hall measurements, we have grown thick samples (1150 nm) on a SOI substrate (Silicon On Insulator) to avoid any transport contribution coming from the su[r]

Table 1.The precursor amounts used in different the composite thin films on ITO substrates samples for investigating the effect of the TiO2/Au precursor concentration on the filling effi[r]

200-nm-thick PZT ferroelectric thin films have been successfully deposited on Nb:STO(111) single-crystal substrate via solution process, like an epitaxial growth.. SEM images described[r]

CONCLUSION 200-nm-thick PZT ferroelectric thin films have been successfully deposited on Nb:STO111 single-crystal substrate via solution process, like an epitaxial growth.. SEM images de[r]

possible microwave applications. Lucky for microwave applications, BST film dielectric constant in comparison with bulk ceramics decreases about 10 times ( ε film ~ 400 – 1000) that is important for device matching. Temperature dependence of ε film becomes slick that provides device thermal s[r]

Furthermore, there is no evidence of the presence of a second junction in se- ries with the top GB. Within the measurement accuracy, in fact, the I–V charac- teristic of the whole SEJ is identical to the that of the top GB. This has been veri- fied for several junctions on different chips in[r]

AZO thin films were deposited on pristine glass substrate and glass substrates modified by different chain length of alkylsilane SAMs at room temperature using RF sputtering.. A shutter [r]

spin orientation, in FM layer via an external electric field in a FM/FE layer heterostructures with various magnetic films grown on FE substrates has been investigated by[r]

Received: 21 October 2008 / Accepted: 4 March 2009 / Published online: 17 March 2009
Ó to the authors 2009
Abstract Glomerate GaN nanowires were synthesized on Si(111) substrates by annealing sputtered Ga 2 O 3 /Co films under flowing ammonia at temperature of 950 ° C[r]

TRANG 1 44 ELECTRICAL PROPERTIES OF NB-DOPED TIO 2 THIN FILMS DEPOSITED BY CO-SPUTTERING PROCESS HOANG NGOC LAM HUONG * , NGUYEN MINH HIEU, NGUYEN THI TIEN, NGUYEN TRAN THUAT, NGUYEN HOA[r]